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SMD Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
CDBF0140L
Io = 100 mA VR = 40 Volt s Features
Low forward Voltage
(Lead-free Device)
1005(2512)
0.102(2.60) 0.095(2.40)
Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction.
0.051(1.30) 0.043(1.10)
Mechanical data
0.035(0.90)
Case:
1005 (2512) Standard package , molded plastic.
0.027(0.70)
0.020(0.50) Typ.
Terminals: Gold plated, solderable per MIL-STD-750, method 2026.
0.012 (0.30) Typ.
Polarity: Indicated by cathode band.
0.020(0.50) Typ.
Mounting position: Any.
Dimensions in inches and (millimeter)
Weight: 0.006 gram (approximately).
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method )
Conditions
Symbol Min Typ Max Unit
VRM VR Io IFSM TSTG Tj -40 -40 45 40 100 1 +125 +125 V V mA A C C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Forward voltage I F = 100 mA I F = 10 mA Reverse current Capacitance between terminals VR = 10 V f = 1MHz, and 10 VDC reverse voltage
Conditions
Symbol Min Typ Max Unit
VF VF IR CT 6 0.55 0.34 30 V V uA pF
REV:A
QW-A1014
Page 1
SMD Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBF0140L)
Fig. 1 - Forward characteristics
1000
10m 1m
Fig. 2 - Reverse characteristics
Forward current (mA )
Reverse current ( A )
O
75
C
100u 10u 1u 100n 10n
O C
O
100
25
C
10
-25
125 C
O
C
O
C
O
O
75
-2 5
25
C
1 0
0.1
0
1n
.2 0.3 0.4 0.5 0.6 0.7
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between terminals characteristics
15
Fig. 4 - Current derating curve
Capacitance between terminals (pF)
Average forward current ( % )
Mounting on glass epoxy PCBs
12
100
80
9
60
6
40
3
20
0 0 10 20 30 40
0
0
25
50
75
100
125
150
Reverse voltage (V)
Ambient temperature ( C )
REV:A
QW-A1014
Page 2

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